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APTGF200U60D4
Single switch NPT IGBT Power Module
1
VCES = 600V IC = 200A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Non Punch Through (NPT) fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Low stray inductance - M6 connectors for power - M4 connectors for signal * High level of integration Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat
3 5 2
2 4 5
1
3
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C
V W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-5
APTGF200U60D4 - Rev 1
Reverse Bias Safe Operation Area
400A@420V
June, 2005
Max ratings 600 250 200 400 20 735
Unit V A
APTGF200U60D4
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(on) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V VCE = 600V Tj = 25C Tj = 125C Tj = 25C VGE = 15V IC = 200A Tj = 125C VGE = VCE , IC = 4mA VGE = 20V, VCE = 0V Min Typ 1 1 1.95 2.2 5.5 Max 500 2.45 6.5 400 Unit A mA V V nA
4.5
Dynamic Characteristics
Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy
Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 300V IC = 200A R G = 1.5 Inductive Switching (125C) VGE = 15V VBus = 300V IC = 200A R G = 1.5
Min
Typ 9 0.8 163 43 253 33 183 49 285 41 4.6 6.3
Max
Unit nF
ns
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM VF ER Qrr Maximum Reverse Leakage Current Diode Forward Voltage Reverse Recovery Energy Reverse Recovery Charge
Test Conditions VR=600V IF = 200A VGE = 0V IF = 200A VR = 300V di/dt =4000A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C Tj = 25C Tj = 125C
Min 600
Typ
Max 250 500 1.6
Unit V A V mJ C
1.25 1.2 4.1 12 19
APT website - http://www.advancedpower.com
2-5
APTGF200U60D4 - Rev 1
June, 2005
APTGF200U60D4
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight M6 M4 IGBT Diode 2500 -40 -40 -40 3 1 Min Typ Max 0.17 0.29 150 125 125 5 2 420 Unit
C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V C N.m g
Package outline (dimensions in mm)
APT website - http://www.advancedpower.com
3-5
APTGF200U60D4 - Rev 1
June, 2005
APTGF200U60D4
Typical Performance Curve
Output Characteristics (V GE=15V) Output Characteristics 400 350 300 IC (A)
T J=125C TJ = 125C VGE=15V VGE =12V
400 350 300
IC (A)
TJ =25C
V GE=20V
250 200 150 100 50 0 0 0.5 1 1.5 2 VCE (V) 2.5
250 200 150 100 50 0
V GE=9V
3
3.5
0
1
2
3 V CE (V)
4
5
Transfert Characteristics 400 350 300 E (mJ) IC (A) 250 200 150 100 50 0 5 6 7 8 9 10 11 12 VGE (V) Switching Energy Losses vs Gate Resistance 16
VCE = 300V VGE =15V IC = 200A T J = 125C Eon TJ=25C TJ =125C T J=25C
Energy losses vs Collector Current 15 12.5 10 7.5 5 2.5 0 0 50 100 150 200 250 300 350 400 IC (A)
Er VCE = 300V VGE = 15V RG = 1.5 TJ = 125C
Eoff
Eon
500 400 IC (A) 300 200
Reverse Safe Operating Area
12 E (mJ)
8
Eoff
4
Er
100 0
VGE =15V TJ =125C RG=1.5
0 0 2 4 6 8 10 Gate Resistance (ohms) 12
0
100
200
300 VCE (V)
400
500
600
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.18 Thermal Impedance (C/W) 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0.9 0.7 0.5 0.3 0.1 0.05 0.0001
IGBT
Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10
0 0.00001
APT website - http://www.advancedpower.com
4-5
APTGF200U60D4 - Rev 1
June, 2005
APTGF200U60D4
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 100 80 60 40 20 0 0 50 100 150 IC (A) 200 250 300
hard switching ZCS VCE =300V D=50% RG=1.5 T J=125C T C=75C
Forward Characteristic of diode 400 350 300 250 IC (A) 200 150 100 50 0 0 0.2 0.4 0.6 0.8 1 V F (V) 1.2 1.4 1.6
TJ =25C TJ=125C
ZVS
0.3 Thermal Impedance (C/W) 0.9 0.25 0.7 0.2 0.15 0.1 0.05 0.5 0.3 0.1 0.05
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration Diode
Single Pulse 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10
0 0.00001
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
5-5
APTGF200U60D4 - Rev 1
June, 2005

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